PART |
Description |
Maker |
HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
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HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
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HITACHI[Hitachi Semiconductor]
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HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405TS |
16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
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HITACHI[Hitachi Semiconductor]
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IS43R16160-6TL |
Auto refresh and Self refresh
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Integrated Silicon Solu...
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HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
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Samsung Electronic Samsung semiconductor
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LT3420 LT3420EMSTRPBF LT3420-1 |
Photoflash Capacitor Chargers with Automatic Refresh Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
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Linear Technology, Corp. Linear Technology Corporation
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HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh 16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位)2刷新
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Hitachi,Ltd.
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M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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HYB5116165BSJ-50- HYB5116165BJ-70 HYB5116165BJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
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http:// SIEMENS AG
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MRA4005T1 MRA4004 MRA4004T3 MRA4004T3G MRA4003 MRA |
Surface Mount Standard Recovery Power Rectifier 1 A, 600 V, SILICON, SIGNAL DIODE 1A 600V Standard Recovery Rectifier 1A 400V Standard Recovery Rectifier 1A 800V Standard Recovery Rectifier 1A 1000V Standard Recovery Rectifier
|
ONSEMI[ON Semiconductor]
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M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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